Hans Queisser

Hans Joachim Queisser, born in Berlin, Germany in 1931, is a solid-state physicist. He received his doctorate in 1958 at Goettingen University, and joined the Shockley Transistor Corporation in the fall of 1959 – until 1963. His activities in the “barn” on 391 South San Antonio Road in Mountain View concerned the physics of silicon, junctions, defects, crystal growth, epitaxy and solar cells. With Shockley, he published a paper in the Journal of Applied Physics (Vol. 32, 510, 1962) on the efficiency of solar cells, which is now considered the key contribution in this field. Dislocations in silicon were discovered by Queisser as a result of heavy doping diffusions. He and his co-worker Richard Finch first identified oxygen-induced stacking faults and achieved the first transmission electron microscopy on semiconductors with J. Washburn and G. Thomas at UC Berkeley. Queisser joined Bell Laboratories in 1964, where he worked on gallium arsenide and invented a high-power luminescent diode. In 1966, he became Professor in Frankfurt, Germany. He was a founding director of the Max-Planck-Institute at Stuttgart, Germany until his retirement in 1998. Queisser is a Fellow of the American Physical Society; he was President of the German Physical Society. One of his doctoral students, H. Stoermer, won a Nobel Prize in Physics.


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